Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser
| Autor: | Bartosz Jezewski, Paweł Hoser, Artur Broda, Jan Muszalski, Iwona Sankowska, Michał Szymański |
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| Rok vydání: | 2020 |
| Předmět: |
Quantum optics
Range (particle radiation) Materials science Physics and Astronomy (miscellaneous) business.industry 020208 electrical & electronic engineering General Engineering General Physics and Astronomy Heterojunction 02 engineering and technology Epitaxy Laser law.invention 020210 optoelectronics & photonics Membrane law 0202 electrical engineering electronic engineering information engineering Optoelectronics business Quantum well Molecular beam epitaxy |
| Zdroj: | Applied Physics B. 126 |
| ISSN: | 1432-0649 0946-2171 |
| DOI: | 10.1007/s00340-020-07544-y |
| Popis: | The epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date. |
| Databáze: | OpenAIRE |
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