| Autor: |
Matthew V. Metz, K. Kuhn, S. Ramey, C. Auth, Tahir Ghani, Christopher J. Wiegand, R. Chau, B. McIntyre, G. Dewey, S. Pae, W. Rachmady, Markus Kuhn, J. Hicks, Jack Portland Kavalieros, A. Roskowski, Roza Kotlyar, J. Wiedemer, Chetan Prasad, J. Sandford, J. Maiz, J. Jopling, M. Agostinelli, M. Brazier, C. Thomas, Kaizad Mistry, Michael L. Hattendorf |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 IEEE International Reliability Physics Symposium. |
| Popis: |
In this paper, we present extensive breakdown results on our 45nm HK+MG technology. Polarity dependent breakdown and SILC degradation mechanisms have been identified and are attributed gate and substrate injection effects. Processing conditions were optimized to achieve comparable TDDB lifetimes on HK+MG structures at 30% higher E-fields than SiON with a reduction in SILC growth. Extensive long-term stress data collection results and a change in voltage acceleration are reported. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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