Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
| Autor: | Takashi Suemasu, Ken Ichiro Takakura, Y. Negishi, Toyohiro Chikyow, Fumio Hasegawa |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Silicon business.industry Analytical chemistry chemistry.chemical_element Electroluminescence Epitaxy law.invention chemistry law Transmission electron microscopy Optoelectronics Light emission business Light-emitting diode Diode |
| Zdroj: | Applied Physics Letters. 79:1804-1806 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1405001 |
| Popis: | We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2. |
| Databáze: | OpenAIRE |
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