Reactions of hydrogen with Si-SiO/sub 2/ interfaces
| Autor: | Daniel M. Fleetwood, Ronald D. Schrimpf, Sergey N. Rashkeev, Sokrates T. Pantelides, R. Buczko |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Suboxide
Nuclear and High Energy Physics Materials science Silicon Hydrogen Annealing (metallurgy) Hydrogen molecule Analytical chemistry Oxide chemistry.chemical_element Radiation chemistry.chemical_compound Nuclear Energy and Engineering chemistry Electric field Electrical and Electronic Engineering Atomic physics |
| Zdroj: | IEEE Transactions on Nuclear Science. 47:2262-2268 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.903763 |
| Popis: | Radiation experiments have established that H/sup +/ released in SiO/sub 2/ migrates to the Si-SiO/sub 2/ interface where it can induce new defects. For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H/sup +/ can be cycled to and from the interface by reversing the oxide electric field. We report first-principles calculations that identify atomic-scale mechanisms for the two types of behavior and the conditions that are necessary for each. Si-Si bonds on the oxide side, i.e.,"suboxide bonds," can trap H+ in deep wells with an asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO/sub 2/ side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposing Si-SiO/sub 2/ interfaces if the density of suboxide bonds is high. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|