Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications
| Autor: | G. Aravindan, S. Sanmugavel, V. Kesavan, S. G. Nagarajan, P. Ramasamy, Manickam Srinivasan |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon Metallurgy chemistry.chemical_element 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Temperature gradient chemistry Block (telecommunications) 0103 physical sciences Materials Chemistry Growth rate Crystalline silicon Ingot 0210 nano-technology Directional solidification |
| Zdroj: | Journal of Crystal Growth. 516:10-16 |
| ISSN: | 0022-0248 |
| Popis: | Directional solidification process is the main process for producing the multi-crystalline silicon ingots. It is economically beneficial to grow the good quality mc-Si ingots with lower power consumption. Here we have carried out numerical simualtion for analysing the impact of addition of an insulation block on the DS furnace. The addition of the insulation block has been implemented experimentally and the quality of the grown ingot was evaluated by the minority carrier lifetime measurement. Though the temperature gradient and hence the growth rate are higher in the insulation block added DS furnace, the generated dislocation density has not increased beyond the acceptable limit 108 1/m2. The power used by the DS furnace has been reduced considerably by the addition of the insulation block. The good quality mc-Si ingot with lower power consumption has been obtained as a result of insulation block addition. |
| Databáze: | OpenAIRE |
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