| Autor: |
Abdulmohsen Alsaui, Selma Amara, Ulan Myrzakhan, Hossein Fariborzi, Meshal Alawein |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 Electron Devices Technology and Manufacturing Conference (EDTM). |
| DOI: |
10.1109/edtm.2019.8731027 |
| Popis: |
We report the design, fabrication and measurement of a spin-orbit torque (SOT) driven multi-state memory. The multi-state memory is based on a 3-nm thick Ni 81 Fe 19 (Py) patterned in the shape of four intersecting ellipses (octagram). Writing is performed by injecting a charge current along one of the Pt wires, which generates a transverse pure spin current capable of switching Py between its states. Information is read through a magnetic tunnel junction (MTJ) using four-point technique. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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