High-power (1 W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (x = 0.8 μm) separate-confinement single-quantum-well broad-area lasers

Autor:	N. A. Strugov, D.Z. Garbuzov, P. Gavrilovic, A. V. Kochergin, Edik U. Rafailov
Rok vydání:	1989
Předmět:	Materials science business.industry Optical power Laser law.invention Gallium arsenide Active layer Semiconductor laser theory chemistry.chemical_compound Optics chemistry law Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Quantum well Beam divergence
Zdroj:	Electronics Letters. 25:1239
ISSN:	0013-5194
Popis:	Liquid-phase epitaxy was used to grow single-quantum-well separate-confinement laser structures with a GaInAsP active layer. Broad-area devices with 100μm-wide stripes that were fabricated from these structures emit over 1 W of optical power per facet at a wavelength of 0.8 μm in continuous room-temperature operation. A stable single-lobed far-field pattern with a beam divergence as low as 0.6° is obtained in pulsed operation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c922803076f29f6f2bcb60cb2f2dfbda https://doi.org/10.1049/el:19890831 Zobrazit plný text záznamu