Thermal Stability of Cobalt Silicide on Polysilicon Implanted with Germanium
| Autor: | Jung-Yu Hsieh, Kuang-Chao Chen, Jeng-Hwa Liao, Ling-Wu Yang, Hsin-Ju Lin, Chih-Yuan Lu, Zong-Jie Ko, Tahone Yang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) Metallurgy Analytical chemistry chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Grain size chemistry Sputtering 0103 physical sciences Thermal stability Crystallite 0210 nano-technology Cobalt |
| Zdroj: | 2016 21st International Conference on Ion Implantation Technology (IIT). |
| Popis: | The thermal stability of CoSi2 layers on P-doped polycrystalline Si was investigated. It was observed that the additional Ge+ implant is performed prior to Co sputtering can suppress the CoSi2 agglomeration behavior. The samples with Ge+ implant at 50KeV implanted energy and more than or equal to the dose of 2E15 ions/cm2 show that the agglomeration of CoSi2 film is completely suppressed during high temperature RTA annealing. The grain size by the CoSi2 formation with the Ge+ implantation is much smaller than that without Ge+ implantation during post annealing. In addition, the cobalt atom in polysilicon layer with Ge+ implantation is shallower compared to without Ge+ implantation. The thermal stability of CoSi2 is significantly improved by adding the Ge+ implantation into polysilicon. |
| Databáze: | OpenAIRE |
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