Experimental and theoretical determination of the saturation vapor pressure of silicon in a wide range of temperatures
| Autor: | D. V. Sevast’yanov, P. Ya. Nosatenko, V. V. Gorskii, N. T. Kuznetsov, Elizaveta P. Simonenko, Yu. S. Ezhov, Vladimir G. Sevastyanov |
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| Rok vydání: | 2010 |
| Předmět: |
Silicon
Vapor pressure Materials Science (miscellaneous) Saturation vapor density Analytical chemistry chemistry.chemical_element Thermodynamics Partial pressure Atmospheric temperature range Inorganic Chemistry chemistry.chemical_compound chemistry Boron nitride Silicon carbide Physical and Theoretical Chemistry Total pressure |
| Zdroj: | Russian Journal of Inorganic Chemistry. 55:2073-2088 |
| ISSN: | 1531-8613 0036-0236 |
| DOI: | 10.1134/s0036023610130036 |
| Popis: | Reference books and original studies devoted to the determination of the saturation vapor pressure of silicon in a wide range of temperatures have been analyzed. It has been established that no reliable experimental data in the range of high temperatures (above 2000 K) are available in the literature. It has been demonstrated that there is a need to perform additional theoretical and experimental investigations with the use of different methods. The total pressure and partial pressures of Si n (n = 1−6) molecules over liquid silicon are calculated in the temperature range 1700–3400 K. The calculation of the composition of the gas phase over the “Si(l)-container” systems is performed. Materials of the crucibles intended for the use in experimental investigations of the temperature dependence of the saturation vapor pressure of silicon over the liquid phase are recommended. |
| Databáze: | OpenAIRE |
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