Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth

Autor:	Jérôme Meziere, Michel Pons, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon
Rok vydání:	2004
Předmět:	Materials science chemistry Mechanics of Materials Mechanical Engineering Inorganic chemistry Nitrogen doping chemistry.chemical_element General Materials Science Condensed Matter Physics Epitaxy Nitrogen
Zdroj:	Materials Science Forum. :731-734
ISSN:	1662-9752
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c9140412647eeecf16e4e1a229e6e41d https://doi.org/10.4028/www.scientific.net/msf.457-460.731 Zobrazit plný text záznamu