High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
| Autor: | N. R. Rueger, J. M. Cook, M. Schaepkens, Gottlieb S. Oehrlein, Pgm Patrick Sebel, T. E. F. M. Standaert |
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| Rok vydání: | 1998 |
| Předmět: |
Silicon
Chemistry technology industry and agriculture Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films X-ray photoelectron spectroscopy Ellipsometry Etching (microfabrication) Fluorocarbon Dry etching Reactive-ion etching Inductively coupled plasma |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:239-249 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.580978 |
| Popis: | For various fluorocarbon processing chemistries in an inductively coupled plasma reactor, we have observed relatively thick (2–7 nm) fluorocarbon layers that exist on the surface during steady state etching of silicon. In steady state, the etch rate and the surface modifications of silicon do not change as a function of time. The surface modifications were characterized by in situ ellipsometry and x-ray photoelectron spectroscopy. The contribution of direct ion impact on the silicon substrate to the etching mechanism is reduced with increasing fluorocarbon layer thickness. Therefore, we consider that the silicon etch rate is controlled by a neutral etchant flux through the layer. Our experimental data show, however, that ions play an import role in the transport of silicon etching precursors through the layer. A model is developed that describes the etch kinetics through a fluorocarbon layer based on a fluorine diffusion transport mechanism. The model is consistent with the data when one or two of the fol... |
| Databáze: | OpenAIRE |
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