Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE
| Autor: | Michael Jetter, Wolfgang-Michael Schulz, Peter Michler, Robert Roßbach, C. Hermannstädter, G. J. Beirne, M. Reischle |
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| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Materials science Atomic force microscopy business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Inorganic Chemistry Condensed Matter::Materials Science Quantum dot Materials Chemistry Low density Optoelectronics Metalorganic vapour phase epitaxy Luminescence business Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 310:5089-5092 |
| ISSN: | 0022-0248 |
| Popis: | We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer ( 10 7 cm - 2 ) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution of the InP/GaInP quantum dot layer where large dome shaped structures and small quantum dots could be observed using atomic force microscopy. Using μ -photoluminescence only luminescence from the small high energetic InP-QDs could be recorded with emission linewidths of around 140 μ eV . Autocorrelation measurements confirmed the zero dimensionality of the InP quantum dots. |
| Databáze: | OpenAIRE |
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