Autor: |
Juliette Mangeney, Loubna El Melhaoui, Delphine Marris-Morini, Paul Crozat, Mathieu Rouviere, Jean-Marc Fedeli, Suzanne Laval, Laurent Vivien, Jean-Francois Damlencourt, Xavier Le Roux, Eric Cassan |
Rok vydání: |
2008 |
Předmět: |
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Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
DOI: |
10.1117/12.765701 |
Popis: |
This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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