Ge photodetectors integrated in Si waveguides

Autor: Juliette Mangeney, Loubna El Melhaoui, Delphine Marris-Morini, Paul Crozat, Mathieu Rouviere, Jean-Marc Fedeli, Suzanne Laval, Laurent Vivien, Jean-Francois Damlencourt, Xavier Le Roux, Eric Cassan
Rok vydání: 2008
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.765701
Popis: This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias.
Databáze: OpenAIRE