Analysis of the Three-Dimensional Model of Diffusion of Minority Charge Carriers Generated by an Electron Probe in a Heterogeneous Semiconductor Material by Means of Projection Methods
| Autor: | M. A. Stepovich, E. V. Seregina, A. M. Makarenkov |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Computation Electron 01 natural sciences Stability (probability) Surfaces Coatings and Films Computational physics 010101 applied mathematics 0103 physical sciences Projection method Charge carrier 0101 mathematics Diffusion (business) Projection (set theory) Galerkin method |
| Zdroj: | Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:80-86 |
| ISSN: | 1819-7094 1027-4510 |
| DOI: | 10.1134/s1027451018010160 |
| Popis: | Algorithms for using the Galerkin projection method and the projection least squares method to analyze the three-dimensional model of the diffusion of minority charge carriers generated by an electron probe in a semiconductor material are presented. The results obtained using these methods are compared with the analytical solution. An estimate of the error is given, and the condition for the computation stability of the projection least squares method in the form of the limiting relation is obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink