| Autor: |
Hans Goverde, Shuji Tanaka, Ingrid De Wolf, Veerle Simons, Bart Vermang, R. Mertens, Johan Meersschaut, Jef Poortmans, Joachim John |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 38th IEEE Photovoltaic Specialists Conference. |
| Popis: |
This work investigates the formation of blisters during annealing an Al 2 O 3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al 2 O 3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H 2 and H 2 O and (ii) Al 2 O 3 being a diffusion barrier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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