Dependence of Hot Electron Transport on Base Layer Thickness of Magnetic Tunnel Transistor
| Autor: | Takakazu Hirose, Mutsuko Jimbo, Yuji Fujiwara, Tadashi Kobayashi, Morio Masuda, Shigeru Shiomi |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
chemistry.chemical_classification
Condensed matter physics Base (chemistry) Schottky barrier Transistor General Engineering General Physics and Astronomy Giant magnetoresistance equipment and supplies Layer thickness law.invention chemistry law Spin transistor human activities Hot electron Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 43:2479 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.43.2479 |
| Popis: | The hot electron transport phenomenon has been investigated in magnetic tunnel transistors with various base layer thicknesses. In terms of Au layer thickness, the magneto-current and the transfer ratio were at a maximum when the Au layer thickness was approximately 8.0 nm. For the magnetic layer thickness, the transfer ratio decreased monotonically with increasing magnetic layer thickness. The magneto-current increased with increasing magnetic layer thickness up to 3.0 nm, and a maximum increase of approximately 370% was observed at 77 K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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