Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs
| Autor: | P. M. Adams, R. C. Bowman, J.F. Knudsen |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
010302 applied physics
Diffraction Materials science Dopant business.industry Annealing (metallurgy) Doping 02 engineering and technology General Medicine 021001 nanoscience & nanotechnology 01 natural sciences Semiconductor Ion implantation 0103 physical sciences X-ray crystallography Optoelectronics Microelectronics 0210 nano-technology business |
| Zdroj: | Advances in X-ray Analysis. 34:531-541 |
| ISSN: | 2631-3626 0376-0308 |
| DOI: | 10.1154/s0376030800014853 |
| Popis: | Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing. |
| Databáze: | OpenAIRE |
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