Improvement of Memory State Misidentification Caused by Trap-Assisted GIDL Current in a SONOS-TFT Memory Device

Autor:	Chia-Sheng Lin, Ching-Chieh Shih, Jim-Shone Chen, Shih-Ching Chen, Ming-Hsien Lee, Ting-Chang Chang, Fu-Yen Jian, Te-Chih Chen
Rok vydání:	2009
Předmět:	Materials science business.industry Transistor Electrical engineering Integrated circuit Nitride Signal Electronic Optical and Magnetic Materials law.invention Non-volatile memory Trap (computing) law Thin-film transistor Erasure Optoelectronics Electrical and Electronic Engineering business
Zdroj:	IEEE Electron Device Letters. 30:834-836
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2009.2023827
Popis:	This letter studies the nonvolatile memory characteristics of polycrystalline-silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon (SONOS) structure. As the device was programmed, significant trap-assisted gate-induced drain leakage current was observed due to the extra programmed electrons trapped in the nitride layer which lies above the gate-to-drain overlap region. In order to suppress the leakage current and thereby avoid signal misidentification, we utilized band-to-band hot hole injection into the nitride layer. Because the injected hot holes can remain in the nitride layer after repeated Fowler-Nordheim erase and program operations, this method can exhibit good sustainability in such a SONOS-TFT memory device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8da77ea67428c59b229104749ae95c0 https://doi.org/10.1109/led.2009.2023827 Zobrazit plný text záznamu