A 5V Only 16Mbit Flash EEPROM Cell Using Highly Reliable Write/Erase Technologies

Autor:	Takeshi Okazawa, N. Kodama, K. Saitoh, Y. Hokari, H. Shirai
Rok vydání:	1991
Předmět:	Materials science business.industry Transistor Electrical engineering Threshold voltage law.invention Flash (photography) law National Electrical Code Optoelectronics EPROM business Quantum tunnelling EEPROM Degradation (telecommunications)
Zdroj:	1991 Symposium on VLSI Technology.
DOI:	10.1109/vlsit.1991.705997
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8da3a194ae2a74449ed6f185d7b01b1 https://doi.org/10.1109/vlsit.1991.705997 Zobrazit plný text záznamu