Autor: |
Sanae Ichikawa, Takeo Matsuki, Yuu Eshima, Tomonari Yamauchi, Kazuo Terada |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
Solid-State Electronics. 47:1465-1470 |
ISSN: |
0038-1101 |
Popis: |
A new method to extract the effective channel length of a double-diffused MOSFET (DMOSFET) is proposed. This method models the DMOSFET by two MOSFETs serially connected each other, and extracts their channel lengths by fitting the effective channel length versus gate-voltage relation calculated by the present model to the measured one. The effective channel lengths extracted by this method is verified to be useful. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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