Parasitic side channel formation due to ion implantation isolation of GaN HEMT

Autor:	Hao Yu, Uthayasankaran Peralagu, Alireza Alian, Ming Zhao, Bertrand Parvais, Nadine Collaert
Rok vydání:	2022
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	MRS Advances. 7:1274-1278
ISSN:	2059-8521
DOI:	10.1557/s43580-022-00453-6
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8c37c75e906af739d29f1e3d99af48f https://doi.org/10.1557/s43580-022-00453-6 Zobrazit plný text záznamu Full text from SpringerLink