Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
| Autor: | Akira Kawanami, Seiichi Miyazaki, Mitsuhisa Ikeda, Katsunori Makihara |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Thermal oxidation
Materials science Condensed matter physics Physics::Instrumentation and Detectors Nucleation Light irradiation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Quantum dot Percolation Electrode Area density Electrical and Electronic Engineering Current (fluid) |
| Zdroj: | IEICE Transactions on Electronics. :569-572 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e93.c.569 |
| Popis: | Silicon-quantum-dots (Si-QDs) with an areal density as high as ∼1012cm-2 were self-assembled on thermally-grown SiO2 by low pressure CVD using Si2H6, in which OH-terminated SiO2 surface prior to the Si CVD was exposed to GeH4 to create nucleation sites uniformly. After thermal oxidation of Si-QDs surface, two-dimensional electronic transport through the Si-QDs array was measured with co-planar Al electrodes evaporated on the array surface. Random telegraph signals were clearly observed at constant applied bias conditions in dark condition and under light irradiation at room temperature. The result indicates the charging and discharging of a dot adjacent to the percolation current path in the dots array. |
| Databáze: | OpenAIRE |
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