Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure

Autor:	N. D. Il’inskaya, A. S. Petrov, N. M. Latnikova, N. M. Stus, M. A. Remennyi, E. N. Sevost’yanov, B. A. Matveev, A. A. Lavrov, S. A. Karandashev
Rok vydání:	2013
Předmět:	Materials science Physics and Astronomy (miscellaneous) law business.industry Doping Optoelectronics Heterojunction Substrate (electronics) business Photodiode law.invention Diode
Zdroj:	Technical Physics Letters. 39:818-821
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785013090174
Popis:	Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n +-InAs substrate (n + ∼ 1018 cm−3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8b17adbb14af9ae8f98935c5a61d472 https://doi.org/10.1134/s1063785013090174 Zobrazit plný text záznamu Plný text ve formátu PDF