Annealing behavior of implanted BF2 in buried channel PMOS

Autor:	Tae-Hoon Huh, Jae-Sang Ro
Rok vydání:	2011
Předmět:	Materials science Dopant Silicon business.industry Annealing (metallurgy) chemistry.chemical_element Electronic Optical and Magnetic Materials PMOS logic Amorphous solid Threshold voltage chemistry Optoelectronics Wafer business Sheet resistance
Zdroj:	Electronic Materials Letters. 7:167-170
ISSN:	2093-6788 1738-8090
DOI:	10.1007/s13391-011-0614-9
Popis:	As devices are scaled down to sub-100 nm size, additional implant parameters such as instantaneous dose rate and wafer temperature as well as dose, energy, and implant angle have become increasingly important for controlling dopant profiles. The peak height of the concentration profiles for both boron and fluorine in BF2 implanted silicon, corresponding to the location of the amorphous/crystalline (a/c) interface, was observed to increase with increasing wafer temperature and to a lesser degree with increasing instantaneous dose rate. By increasing the wafer temperature, the threshold voltage (Vt) decreased dramatically while the sheet resistance (Rs) of the active area remained constant. The high peak height resulted in enhanced lateral diffusion, shorter effective channel length, and a lower threshold voltage in a buried channel p-type metal-oxide-semiconductor (PMOS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8ae8c8fc7b23e7187119c90ab9f976c https://doi.org/10.1007/s13391-011-0614-9 Zobrazit plný text záznamu Full text from SpringerLink