Circular Transmission Line Model (CTLM) Analysis for Non-Linear VI Characteristics on Mg doped GaN

Autor:	Jennifer Pagan, Edward B. Stokes, Michael D. Hodge, Kinnari Patel, Paolo Batoni, Casey C. Burkhart
Rok vydání:	2007
Předmět:	Nonlinear system Materials science Transmission line business.industry Doping Optoelectronics business
Zdroj:	ECS Transactions. 11:203-208
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2783873
Popis:	In this paper, we present a model that can be used to determine semiconductor material parameters for metal-semiconductor contacts with non-linear voltage-current (V-I) characteristics. The model uses the Circular Transmission Line Model (CTLM) approach to calculate sheet resistance (RSH) and resistivity (ρ) of Mg doped HVPE and MBE GaN epilayers giving values close to those achieved by Hall measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8aafaebb7d47747a025072d2403d17a https://doi.org/10.1149/1.2783873 Zobrazit plný text záznamu