Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates

Autor:	Po Shan Hsu, Hiroaki Ohta, Anurag Tyagi, James S. Speck, Shuji Nakamura, Kenji Fujito, Kathryn M. Kelchner, Steven P. DenBaars, Erin C. Young, Daniel A. Haeger, Junichi Sonoda, Robert M. Farrell, Alexey E. Romanov
Rok vydání:	2011
Předmět:	Fabrication Materials science Bar (music) business.industry chemistry.chemical_element Electroluminescence Condensed Matter Physics Laser law.invention Wavelength Optics chemistry law Optoelectronics business Lasing threshold Indium Diode
Zdroj:	physica status solidi c. 8:2390-2392
ISSN:	1610-1642 1862-6351
Popis:	We demonstrate the first blue AlInGaN-based laser diodes (LDs) grown on semipolar (33) free-standing GaN substrates. Etched facet ridge waveguide LDs were fabricated and tested under pulsed operation. Lasing was achieved at 477.5 nm with a threshold current density of 12.2 kA/cm2. The peak electroluminescence wavelength was shown to blue-shift from approximately 494 nm to 477 nm upon reaching threshold. Initial experimental data also show the (33) plane to have higher indium incorporation efficiency than the (33) plane, suggesting that (33) GaN substrates may be more suitable for growth and fabrication of long-wavelength AlInGaN-based LDs than (33) GaN substrates. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c89e95293facb29e40073b5a4f62d077 https://doi.org/10.1002/pssc.201001012 Zobrazit plný text záznamu Plný text