Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance
| Autor: | Koji Yano, Akio Takatsuka, Yasunori Tanaka, Tsutomu Yatsuo, Kazuo Arai |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Engineering
business.industry Bipolar junction transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Power electronics Logic gate Hardware_INTEGRATEDCIRCUITS Silicon carbide Optoelectronics Power semiconductor device Electrical and Electronic Engineering business Short circuit Hardware_LOGICDESIGN Static induction transistor |
| Zdroj: | IEEE Transactions on Electron Devices. 57:919-927 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Fundamental short-circuit operations of silicon carbide static induction transistors with buried-gate structures (BGSITs) were experimentally clarified, with subsequent device simulations. The impacts of channel width and source length on short-circuit capabilities were investigated. In particular, a design concept of the channel width was proposed to improve the short-circuit energy without a serious increase in on-resistance. The maximum short-circuit capability of the fabricated BGSITs was 18 J/cm2 at room temperature, which shows excellent performance compared with that of conventional Si insulated-gate bipolar transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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