Implementation of Short-Term Plasticity and Long-Term Potentiation in a Synapse Using Si-Based Type of Charge-Trap Memory

Autor:	Jong-Ho Lee, Change-Hee Kim, Myoung-Sun Lee, J. W. Lee, Byung-Gook Park
Rok vydání:	2015
Předmět:	Materials science business.industry Plasticity Capacitance Electronic Optical and Magnetic Materials Synapse Synaptic weight Neuromorphic engineering Logic gate Electronic engineering Memory functions Optoelectronics Electrical and Electronic Engineering business Voltage
Zdroj:	IEEE Transactions on Electron Devices. 62:569-573
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2014.2378758
Popis:	We present a novel silicon-based type of charge-trap memory using Al/HfO2/Al2O3/Si3N4/Si structure mimicking memory functions in a biological synapse. The quantity of the trapped charge in the proposed Al2O3/HfO2/Si3N4 stack is estimated by measuring the capacitance over time, which can be regarded as synaptic weight changes. By applying repeated voltage pulses at periodic intervals of different times, reliable short-term plasticity and long-term potentiation properties are obtained along with their transition behavior. This architecture is compatible with the CMOS process and shows great promise as an essential part for the implementation of an electrical neuromorphic system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c87b344091303089a1af2434fccd9f71 https://doi.org/10.1109/ted.2014.2378758 Zobrazit plný text záznamu