Schottky barrier at the Al/Si(111) doped and double-doped interfaces: a local-density cluster study
| Autor: | I.A. Kuyanov, V.G. Zavodinsky |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Silicon Condensed matter physics business.industry Schottky barrier Doping chemistry.chemical_element Condensed Matter Physics Optics chemistry Aluminium Density of states Cluster (physics) General Materials Science Electrical and Electronic Engineering Local-density approximation business Layer (electronics) |
| Zdroj: | Superlattices and Microstructures. 24:55-60 |
| ISSN: | 0749-6036 |
| Popis: | Using the local-density approximation method we have investigated a cluster model of the Al/Si(111) interface. P atoms were placed in the fifth silicon double-atomic layer (DAL) counting from the interface. The second DAL was doped with either Ga or As. The Schottky barrier height was found to be 0.75 eV at the Al/Si(intrinsic) system and 0.73 eV at the Al/Si(P-doped) case. The additional doping of the near-interface layer by Ga increased the barrier to 0.90 eV while the As doping decreased it to 0.5 eV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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