Spin-on Gate Dielectric Materials for Next Generation Display Systems

Autor:	Emma Brouk, Brian J. Daniels, Mehari Stifanos, Ahila Krishnamoorthy, Peter Smith, Jinghong Chen, Jan Nedbal
Rok vydání:	2006
Předmět:	chemistry.chemical_classification Materials science business.industry Gate dielectric Dielectric Polymer chemistry Thin-film transistor Optoelectronics Breakdown voltage business Curing (chemistry) High-κ dielectric Sol-gel
Zdroj:	MRS Proceedings. 936
ISSN:	1946-4274 0272-9172
Popis:	We present recent advances on spin-on polymers as gate dielectric for thin film transistors. We have developed film type I with significantly improved dielectric properties. At a curing temperature of 250 °C, the dielectric constant is 3.46, the breakdown voltage is 4.10 MV/cm at 1 μA/cm2, the leakage current is 4.9 × 10−8 A/cm2 at 2.5 MV/cm, and the CV hysteresis is 3.4 V. At a curing temperature of 425 °C, the dielectric constant, the breakdown voltage, the leakage current, and the CV hysteresis are 3.2, 4.73 MV/cm, 2.6 × 10−8 A/cm2, and 0.44 V respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c85e2c7216ad37b618f72e7ee070f871 https://doi.org/10.1557/proc-0936-l11-03 Zobrazit plný text záznamu Full text from SpringerLink