Introducing a Surface-Enhanced-Raman-Scattering Enhancer for Experimental Estimation of the Debye Screening Length in Organic Field-Effect Transistors
Autor: | Zengqi Xie, Yanrui Lin, Xuehua Hou, Linlin Liu, Meihua Shou, Cong Wang, Hao Li |
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Rok vydání: | 2021 |
Předmět: |
Surface (mathematics)
Materials science Photodetector Channel geometry Molecular physics Electronic Optical and Magnetic Materials Pentacene symbols.namesake chemistry.chemical_compound chemistry In situ raman spectroscopy Materials Chemistry Electrochemistry symbols Field-effect transistor Raman scattering Debye length |
Zdroj: | ACS Applied Electronic Materials. 3:1920-1930 |
ISSN: | 2637-6113 |
DOI: | 10.1021/acsaelm.1c00148 |
Popis: | The Debye screening length LD is one of the key parameters for the field-effect channel geometry. However, to the best of our knowledge, there are little reports on the experimental estimation of L... |
Databáze: | OpenAIRE |
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