Effects of gamma-ray irradiation and electrical stress on ZnO thin film transistors

Autor:	Thomas N. Jackson, Yuanyuan V. Li, Hitesh A. Basantani, J. Israel Ramirez
Rok vydání:	2013
Předmět:	Materials science Silicon business.industry Gamma ray chemistry.chemical_element Dielectric Radiation Atomic layer deposition chemistry Thin-film transistor MOSFET Electronic engineering Optoelectronics Irradiation business
Zdroj:	71st Device Research Conference.
DOI:	10.1109/drc.2013.6633848
Popis:	Radiation tolerance is of interest in electronic applications such as radiation sensors, nuclear reactors, x-ray imagers, and high-energy particle accelerators. While properly designed Si MOSFETS are usefully radiation resistant, most thin-film transistors (TFTs), including polysilicon and a-Si:H, are severely degraded by relatively low irradiation dose (typically
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c8566026a8949feae350eb1ab0585cee https://doi.org/10.1109/drc.2013.6633848 Zobrazit plný text záznamu