Characteristics of gallium arsenide (GaAs) light emitting diode for wireless systems
| Autor: | R. Prathipa, S. Sathiya Priya, M. Premkumar, M. Arun, D. Kalaiarasi |
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| Rok vydání: | 2023 |
| Předmět: |
Materials science
business.industry Optical link Physics::Optics Photodetector General Medicine law.invention Gallium arsenide Base station chemistry.chemical_compound Transmission (telecommunications) chemistry law Computer Science::Networking and Internet Architecture Optoelectronics Fading Photonics business Light-emitting diode |
| Zdroj: | Materials Today: Proceedings. 80:1932-1935 |
| ISSN: | 2214-7853 |
| Popis: | This paper presents performance of gallium arsenide (GaAs) light emitting diode (GaAsLED) for wireless systems such as mobile communication system. Due to the fact mobile communication systems require effective signal transmission it is possible to aid with quantum photonic devices such as light emitting diodes at the transmitting ends which can provide effective and efficient photons transmission from one base station (BS) to another base station through the optical link under ground surface. At the receiving end the photons in the form of light are fed into a photodetector for further information processing as electrical signals. Simulation results portray the current-voltage characteristics of quantum photonic device namely GaAs LED for various scenarios. Further, the bit error rate performance analysis of GaAsLED cellular system is analysed in indoor and outdoor fading channels. The obtained results could be used for the implementation of 5G systems in mobile wireless systems. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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