Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells

Autor:	Hiroshi Itoh, Takeshi Noda, Masato Ohmori, Noriaki Tsurumachi, Mari Ebisu, Masahiro Shiraga, Naoshi Takahashi, Yuko Nakai, Tomohiko Hirashima, Hayato Miyagawa, Akinobu Kittaka, Shunsuke Nakanishi, Shyun Koshiba, Hidefumi Akiyama
Rok vydání:	2011
Předmět:	Materials science Van der Pauw method Photoluminescence Condensed matter physics business.industry Multiple quantum Doping Optoelectronics Condensed Matter Physics Electronic band structure Thermal conduction business Molecular beam epitaxy
Zdroj:	physica status solidi c. 8:420-422
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201000595
Popis:	We have evaluated the effects of Mg doping on the optical and the electrical property of GaNAs/GaAs multiple quantum wells (MQWs) with high N composition (11∼17%) grown by radio-frequency molecular beam epitaxy (RF-MBE). The results of Van der Pauw measurements revealed strong n-type conduction by Mg doping. The blue-shifts and enhanced intensities in photoluminescence by Mg doping suggest the type-II band structure of GaNAs/GaAs MQWs and carrier generation by interstitial Mg atoms (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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