A Pseudomorphic AlGaAs/InGaAs/GaAs MODFET-based Optoelectronic Receiver With A 10 GHz Bandwidth

Autor:	A.A. Ketterson, J.-W. Seo, M. Tong, L. Adesida, D. Ballegeer, K. Nummila, Sung-Mo Kang, Kangguo Cheng
Rok vydání:	2005
Předmět:	Optical amplifier Materials science Passivation Ingaas gaas business.industry Heterojunction bipolar transistor Bandwidth (signal processing) Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics business Terahertz time-domain spectroscopy Indium gallium arsenide
Zdroj:	Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
DOI:	10.1109/leosst.1992.697452
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c839c0c6a1f715324c431847457754f7 https://doi.org/10.1109/leosst.1992.697452 Zobrazit plný text záznamu