Nature of Donors in SiC
| Autor: | B. Suchanek, Maria Kaminska, S. Vlaskina, Robert Dwilinski, M. Palczewska |
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| Rok vydání: | 1995 |
| Předmět: | |
| Zdroj: | Acta Physica Polonica A. 87:321-324 |
| ISSN: | 1898-794X 0587-4246 |
| DOI: | 10.12693/aphyspola.87.321 |
| Popis: | 6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band. PACS numbers: 76.30.Da |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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