Midgap localized states and light emission of porous silicon
| Autor: | Xi-Mao Bao, Xiang-Qin Zheng, Feng Yan, H.C Chen, Chenbin Liu, X.L Zheng, H.C Yang |
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| Rok vydání: | 1993 |
| Předmět: |
Photoluminescence
Condensed matter physics Silicon Band gap chemistry.chemical_element General Chemistry Condensed Matter Physics Porous silicon Molecular physics Photoexcitation Condensed Matter::Materials Science symbols.namesake chemistry Stokes shift Materials Chemistry symbols Photoluminescence excitation Light emission |
| Zdroj: | Solid State Communications. 87:1005-1007 |
| ISSN: | 0038-1098 |
| Popis: | Light emissions of porous silicon were studied by photoluminescence (PL) and photoluminescence excitation spectroscopies (PLE). The results suggest the existence of midgap localized states and provide strong evidence of lattice relaxation effect. Visible light emission may be due to the electron transition between the modified conduction band and the surface related localized states with the participation of phonon emissions. The stokes shift between peaks of photoemission and photoexcitation spectra is about 1.2 eV and varies with different preparation and later treatment conditions of the samples. |
| Databáze: | OpenAIRE |
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