Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2
| Autor: | Kristin De Meyer, Nadine Collaert, Daeyong Kim, Marc Schaekers, Naoto Horiguchi, Soon Aik Chew, Kathy Barla, Jean-Luc Everaert, Geoffrey Pourtois, Erik Rosseel, Steven Demuynck, Anda Mocuta, Keo Myoung Shin, Hao Yu, Anthony P Peter, Aaron Thean, Joon-Gon Lee, Woo-Bin Song |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Schottky barrier Contact resistance Metallurgy Alloy 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Semiconductor Electrical resistivity and conductivity 0103 physical sciences engineering Crystallite Electrical and Electronic Engineering 0210 nano-technology Contact area business |
| Zdroj: | IEEE Transactions on Electron Devices. 63:4632-4641 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | In recent CMOS technology, extreme shrinking of contact area at source/drain regions raises serious concerns of high metal/semiconductor contact resistance. Confronting this problem, we introduce a precontact amorphization implantation plus Ti silicidation technique (PCAI + TiSi x ) and achieve ultralow contact resistivity ( $\rho _{c}$ ) of (1.3 – 1.5) $\times 10^{-9} ~\Omega \cdot \text {cm}^{2}$ on Si:P. This PCAI + TiSi x technique utilizes light amorphization (low-energy implantation), thin Ti and TiSi x film, and moderate thermal budget (500 °C –550 °C): these features are compatible with modern CMOS manufacturing. Moreover, the PCAI + TiSi x -induced $\rho _{c}$ reduction is proved universal on both n- and p-Si. With additional characterizations, we find that the silicidation-induced $\rho _{c}$ variation is not merely a Schottky barrier height tuning effect. The electrical and physical characterizations suggest that the low $\rho _{c}$ is strongly correlated with the formation of interfacial TiSi x crystallites between amorphous TiSi alloy and Si. |
| Databáze: | OpenAIRE |
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