Hydrothermal synthesis of NO2 gas-sensitive and hydrophobic zinc oxide thin films
| Autor: | N.S. Harale, Suprimkumar D. Dhas, Pramod S. Patil, M. N. Padvi, Annasaheb V. Moholkar |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope chemistry.chemical_element Zinc Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Hydrothermal circulation Electronic Optical and Magnetic Materials Contact angle Crystallinity Chemical engineering chemistry 0103 physical sciences Hydrothermal synthesis Electrical and Electronic Engineering Thin film Wurtzite crystal structure |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:3140-3154 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | NO2 gas-sensitive and hydrophobic zinc oxide (ZnO) thin films were synthesized through a simple, economical and eco-friendly hydrothermal route. The synthesized material of varying precursor concentrations was deposited on a non-conducting glass substrate. The precursor concentration can tune the morphology of ZnO and, subsequently, sensitivity towards NO2 gas under study. Once the material gets synthesized, it was annealed at 450 °C and characterized with advanced techniques like X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Visible spectroscopy, photoluminescence and water contact angle measurements which ensures the synthesis of material and reveals morphology and other characteristics of the material. The XRD patterns explore the crystallinity as a revealed the hexagonal wurtzite crystal structure. SEM image analysis reveals that with an increase in precursor concentration the size of the ZnO rod also gets increased. The highest gas response (%) = 557.62% is observed at an operating temperature of 200 °C for NO2 gas at 100 ppm. The response and recovery times are 11.3 s and 126.9 s, respectively, for the optimized sample. Also, the contact angle analysis reveals that hydrophobicity increases with increase in the concentration of precursor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink