A CMOS based fast high-voltage generation circuit for bicmos embedded RF-MEMS applications
| Autor: | Bernd Tillack, Wogong Zhang, Matthias Wietstruck, M. T. Purdy, Mehmet Kaynak |
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| Rok vydání: | 2013 |
| Předmět: |
Engineering
business.industry Electrical engineering High voltage Hardware_PERFORMANCEANDRELIABILITY Ring oscillator BiCMOS law.invention Computer Science::Emerging Technologies CMOS Fall time law Rise time Hardware_INTEGRATEDCIRCUITS Charge pump Electronic engineering Resistor business Hardware_LOGICDESIGN |
| Zdroj: | 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. |
| Popis: | A CMOS based high voltage generation circuit with very fast rise and fall time performance is presented. The entire sub-block designs, namely ring oscillator, charge pump and the discharge resistor, are given. The rise and the fall time of the generated output voltage are characterized using both electrical and optical techniques. The results show that generation of up to 40V signal with a rise time of less than 10μs is possible. The fall time, which is also very critical specification considering the fast switching applications, strongly depends on the discharge resistor but less than 15μs fall times are achieved using 250KΩ discharge resistor with an expense of higher power consumption. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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