| Popis: |
Physical and numerical self-consistent models of the semiconductor optical amplifier (SOA) accounting for effects of the carriers diffusion and the heat emission are developed. Transient characteristics of SOA are obtained for short (below 50 ns) and for long (up to 20 mks) periods in quasi-stationary non-coherent approximation with regard to processes of the heat diffusion. Frequency dependent nonlinear optical reply to the bias current modulation is observed. The physical interpretation of the observable in the SOA phenomena is given, and the main parameters, which determine the regime of the device operation, are exposed. Obtained results are in qualitative agreement with the experimental data observed. |
