a-Si:H Photo Diode With Variable Spectral Sensitivity

Autor:	P. Rieve, Qi Zhu, Markus Böhm, Jürgen Giehl
Rok vydání:	1996
Předmět:	Materials science business.industry Color correction Linearity Photodiode law.invention Optics Spectral sensitivity law Electric field Optoelectronics business Sensitivity (electronics) Diode Voltage
Zdroj:	MRS Proceedings. 420
ISSN:	1946-4274 0272-9172
Popis:	A novel two terminal thin film photo diode for color detection has been developed. The device structure which is based on standard amorphous silicon nipin multilayers exhibits three or even more linearly independent spectral sensitivity peaks and provides linearity over a wide range of illumination levels. Band gap engineering and electric field tailoring allow a precise voltage controlled shift of the collection region of photo generated carriers. The steady-state as well as the transient device characteristics have been studied in detail. Emphasis was put on optimization of the spectral sensitivity of the color diodes. Furthermore, an electronic color correction algorithm is presented which results in an improved color separation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c80b7c39333f434e0cdb78af7cdadef7 https://doi.org/10.1557/proc-420-135 Zobrazit plný text záznamu Full text from SpringerLink