Growth and characterization of low-temperature grown GaN with high Fe doping
| Autor: | Hugo Bender, Masaharu Oshima, J. De Boeck, Stefan Nemeth, Gustaaf Borghs, Hironori Ofuchi, Hiro Akinaga, L Nistor |
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| Rok vydání: | 2000 |
| Předmět: |
Magnetization
Materials science Physics and Astronomy (miscellaneous) Extended X-ray absorption fine structure Condensed matter physics Ferromagnetic material properties Transmission electron microscopy X-ray crystallography Doping Analytical chemistry Molecular beam epitaxy Wurtzite crystal structure |
| Zdroj: | Applied Physics Letters. 77:4377-4379 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1335547 |
| Popis: | We succeeded in growing highly Fe-doped GaN films by solid-source molecular beam epitaxy using an electron-cyclotron-resonance microwave nitrogen plasma. The substrate temperature was in the range of 380–520 °C. The samples were analyzed by x-ray diffraction and transmission electron microscopy, and showed hexagonal (wurtzite) or cubic (zincblende) structure or a mixture of both phases. The Fe concentration was on the order of 1019 cm−3 and extended x-ray absorption fine structure data show that the Fe is substituting the Ga in GaN. The magnetization measurements as a function of temperature reveal ferromagnetic properties below 100 K for the sample grown at the lowest temperature. |
| Databáze: | OpenAIRE |
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