| Autor: |
Earl Gow, Kangho Lee, Lim Wei Yi, Ta-Chien Cheng, Eva Wai Leong Ching, Lim Teck Guan, Jason Janesky |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC). |
| DOI: |
10.1109/eptc.2018.8654329 |
| Popis: |
A magnetic shield was developed for the standard BGA MRAM DDRS chip to increase the magnetic interference tolerance from 100}}oe to more than 500 oetextbf{{. This enabled the low power and fast speed MRAM devices to operate in more rugged conditions. The shield used a soft ferromagnetic material to provide the passive shielding. In addition, the magnetic shield was a substrate level designed andit did not increase the package size significantly. This was expected to have a lower cost than the device level shielding which required to develop ferromagnetic material physical vapour deposition (spin coating, sputtering and plating) in the foundry. Index Terms}--- Magnetic shielding, MRAM packaging, STT-MRAM |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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