(Invited) Recent Advances in the Modeling of ZnSySe1-y / GaAs (001) Heterostructures with Application to Dislocation Sidewall Gettering
| Autor: | Tedi Kujofsa, Johanna E. Raphael, John E. Ayers |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | ECS Transactions. 102:73-91 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | In this paper we describe state-of-the-art approaches to the modeling of strain relaxation and dislocations in ZnSSe/GaAs (001) heterostructures, with applications to dislocation sidewall gettering (DSG) in devices. Current modeling approaches are based on the extension of the original Dodson and Tsao plastic flow model [B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett., 51, 1325 (1987); Appl. Phys. Lett., 52, 852 (1988)] to include compositional grading and multilayers, dislocation interactions, and differential thermal expansion. Important recent breakthroughs have greatly enhanced the utility of these modeling approaches in three respects: i) pinning interactions have been included in graded and multilayered structures, providing a better description of the rate of strain relaxation as well as the limiting value; ii) a refined model describing the interaction length for dislocation-dislocation interactions was formulated to include jogging in compositionally-graded and step-graded layers; and iii) inclusion of back-and-forth weaving of dislocations provides a more accurate description of heterostructures containing strain reversals, such as strained-layer superlattices or overshoot graded layers. We will describe these three key advances and use reasonable estimates of the kinetic parameters for ZnSSe to explain and illustrate practical features of dislocation sidewall gettering in II-VI heterostructures. |
| Databáze: | OpenAIRE |
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