Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure
| Autor: | Sei-Wei Wu, Yu-Ting Chen, Jyun-Bao Yang, Ying-Lang Wang, Ting-Chang Chang, Simon M. Sze, Jheng-Jie Huang, Tzu-Ping Lin, Hsueh-Chih Tseng, Ming-Jinn Tsai, Yi-Chun Wu, Ann-Kuo Chu |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Equivalent series resistance business.industry chemistry.chemical_element Nanotechnology Integrated circuit Electronic Optical and Magnetic Materials Indium tin oxide law.invention Non-volatile memory chemistry law Electroforming Optoelectronics Electrical and Electronic Engineering Current (fluid) Resistor Tin business |
| Zdroj: | IEEE Electron Device Letters. 34:858-860 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2013.2259135 |
| Popis: | This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiOx/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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