Highly reliable and high-power operation of 1.05 μm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

Autor:	Toshiaki Fukunaga, T. Kuniyasu, K. Matsumoto, F. Akinaga, Toshiro Hayakawa
Rok vydání:	2003
Předmět:	Optical amplifier Materials science business.industry Laser Waveguide (optics) Gallium arsenide law.invention Optical pumping chemistry.chemical_compound Optics chemistry law Optoelectronics Quantum well laser business Quantum well Diode
Zdroj:	Optical Fiber Communication Conference and Exhibit.
Popis:	High reliability and high-power 1.05 /spl mu/m highly strained InGaAs laser diodes were realized with using strain compensation for pumping TDFA. We can expect high performances similar to those of conventional 0.98 /spl mu/m lasers being used for pumping EDFA since the high optical property of InGaAs quantum well can be maintained up to 1.1 /spl mu/m in the present study. Higher power operation will be expected by optimizing the waveguide design and growth parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c7fc779d0282ba3746d4f9732bee6ab3 https://doi.org/10.1109/ofc.2002.1036499 Zobrazit plný text záznamu