Multilayer indium saving ITO thin films produced by sputtering method
Autor: | Svitlana Petrovska, Ruslan Sergiienko, Leandro Voisin, Takashi Nakamura, Makoto Ohtsuka |
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Rok vydání: | 2020 |
Předmět: |
Materials science
business.industry Mechanical Engineering Metals and Alloys Oxide chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Indium tin oxide Root mean square chemistry.chemical_compound chemistry Mechanics of Materials Sputtering Electrical resistivity and conductivity Materials Chemistry Optoelectronics Thin film 0210 nano-technology business Layer (electronics) Indium |
Zdroj: | Journal of Alloys and Compounds. 827:154378 |
ISSN: | 0925-8388 |
Popis: | Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm2/V·s and carrier concentration 5.32 1020 cm−3. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (Sa) and root mean square height (Sq) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively. |
Databáze: | OpenAIRE |
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