Aluminum-Titanium Multilayer Interconnect With Titanium Diffusion Barrier

Autor:	Tzuen-Luh Huang, L. Van den hove, S. Tong-Lee, D. N. Nichols
Rok vydání:	1986
Předmět:	Interconnection Materials science chemistry Diffusion barrier Aluminium Rapid thermal processing Degradation (geology) chemistry.chemical_element Composite material Forming gas Layer (electronics) Titanium
Zdroj:	MRS Proceedings. 77
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-77-531
Popis:	The metallurgical reaction at 450°C in forming gas ambient between the Ti diffusion barrier and Al, causing the contact degradation in the Al (1% Si)-Ti multilayer interconnects has been studied. The Ti-Al reaction is reduced by preheating the Ti layer in N2 using rapid thermal processing (RTP) at 2.500°C. The curtailed reaction is attributed to the thin surface titanium oxynitride layer. It was found that a 1000-Å Ti layer inserted between the multilayer and Si is effective as a sacrificial diffusion barrier against contact degradation, but 500-Å Ti is not. RTP of the thin Ti film rendered it effective as a diffusion barrier.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c7dd1489ea73c0388842e410cfdb7bc6 https://doi.org/10.1557/proc-77-531 Zobrazit plný text záznamu Full text from SpringerLink