Electron cyclotron resonance in silicon/silicon germanium heterostructures
Autor: | S. F. Nelson, J. O. Chu, B. S. Meyerson, Z. Schlesinger, S. Q. Murphy |
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Rok vydání: | 1993 |
Předmět: | |
Zdroj: | Applied Physics Letters. 63:222-224 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.110347 |
Popis: | Far‐infrared measurements of the cyclotron resonance absorption of a two‐dimensional electron gas (2DEG) in a strained Si/SiGe heterostructure at low temperature (0.35–4 K) in the magnetic field range 2–14 T are reported. The effective mass was determined to be m*≂0.195±0.004 m0, and exhibited only a slight decrease (3%) at low carrier densities, in contrast to the large (40%) change observed in Si metal‐oxide‐semiconductor field effect transistors. In addition, the cyclotron absorption lines tend to be narrow (≲1 cm−1), and show a significant dependence on both field and carrier density that appears to be related to the filling of the quantized Landau and spin levels of the 2DEG. |
Databáze: | OpenAIRE |
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